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Document change request DCR1183
Show only changes
DCR:
1183
Number:
1183
Name:
Aissa Nehdi
E-mail:
aissa.nehdi@st.com
Organisation:
STMicroelectronics
Changes required for:
General
Status:
Implemented
Date status:
2019-07-04
Signature:
Anastasia Pesce
Document attachments:
5203010_draft(3).pdf
5203016iss4(3).pdf
modification_for_4_escc_specification_of_detail(3).docx
5203010iss7(3).pdf
5204002iss7(3).pdf
Modifications:
-TO 257: D dimension shall be 4.7 min & 5.33 max (OK for both process) and J max at 3.18
-SMD 5 : A dimension shall be 2.84 min & 3.30 max ( OK for both process)
Documents affected:
(5203/010) Transistors High Power NPN, ba ...
Other DCRs affecting these documents:
DCR1144
Changes
(5203/010) Transistors High Power NPN, based on type 2N5154
Page:
Paragraph:
Original text
Modified text
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ESA/SCC Level 0 and 1 Document
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