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Document change request DCR1144
Show only changes
DCR:
1144
Number:
1144
Name:
Steve Jeffery
E-mail:
s.jeffery@morphe.eu
Organisation:
ESCC Executive
Changes required for:
General
Status:
Implemented
Date status:
2018-04-18
Signature:
Anastasia Pesce
Document attachments:
No attachments available
Modifications:
No modifications
Documents affected:
(5205/021) Transistors, Power, MOSFET, N- ...
(5205/022) TRANSISTORS, POWER, MOSFET, N- ...
(5106/016) Diodes, Power Rectifier, Schot ...
(5106/018) Diode, Silicon, Power Rectifie ...
(5204/002) Transistors High Power PNP, ba ...
(5103/031) Diodes, Power Rectifier, High ...
(5103/029) Diodes, Silicon, Power Reciti ...
(5205/029) TRANSISTORS, POWER, MOSFET, P- ...
(5106/019) Diodes Power Rectifier Schott ...
(5205/025) TRANSISTORS, POWER, MOSFET, P- ...
(5103/030) Diodes, Silicon, Power Rectifi ...
(5203/010) Transistors High Power NPN, ba ...
Other DCRs affecting these documents:
DCR1183
,
DCR1229
Changes
(5205/021) Transistors, Power, MOSFET, N-Channel, RAD-HARD, b ...
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Paragraph:
Original text
Modified text
Justification
(5205/022) TRANSISTORS, POWER, MOSFET, N-CHANNEL, RAD-HARD BA ...
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Paragraph:
Original text
Modified text
Justification
(5106/016) Diodes, Power Rectifier, Schottky Barrier, based o ...
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Paragraph:
Original text
Modified text
Justification
(5106/018) Diode, Silicon, Power Rectifier, Schottky Barrier, ...
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Paragraph:
Original text
Modified text
Justification
(5204/002) Transistors High Power PNP, based on type 2N5153
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Modified text
Justification
(5103/031) Diodes, Power Rectifier, High Efficiency Fast Reco ...
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Paragraph:
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(5103/029) Diodes, Silicon, Power Recitifier , High Efficien ...
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(5205/029) TRANSISTORS, POWER, MOSFET, P-CHANNEL, RAD-HARD BA ...
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Paragraph:
Original text
Modified text
Justification
(5106/019) Diodes Power Rectifier Schottky Barrier based on ...
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Paragraph:
Original text
Modified text
Justification
(5205/025) TRANSISTORS, POWER, MOSFET, P-CHANNEL, RAD-HARD BA ...
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Paragraph:
Original text
Modified text
Justification
(5103/030) Diodes, Silicon, Power Rectifier, High Efficiency, ...
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Paragraph:
Original text
Modified text
Justification
(5203/010) Transistors High Power NPN, based on type 2N5154
Page:
Paragraph:
Original text
Modified text
Justification
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Documents
ESCC Documents & Procedures
Archive
ESA/SCC Level 0 and 1 Document
Products
Standards
Specifications
Qualification
Qualified Parts List
Qualified Manufacturers List
Selection
Activities
Archive
European Components Initiative (ECI)
Other ESA Programmes
Links
ESCIES
Problem Notices