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Document change request DCR790
Show only changes
DCR:
790
Number:
790
Name:
Samuel Savin
E-mail:
samuel.savin@st.com
Organisation:
STMicroelectronics
Changes required for:
General
Status:
Implemented
Date status:
2013-09-30
Signature:
Anastasia Pesce
Document attachments:
strh8n10_dcr_revision_2.pdf
strh8n10_dcr_revision_2.docx
Modifications:
The following additions and amendments to the original DCR attachment shall apply:
Amendment: Para 1.4.2 replace with following (modified) text:
Delete Variant 02 and amend variant 01 to be as follows:
• Variant Number: 01
• Based on Type: STRH8N10
• Case: SMD.5
• Terminal material and Finish: Q14
• Weight max g: 2
• Total dose Radiation Level Letter: F [50kRAD/Si]
The terminal material and finish shall be in accordance with the requirements of ESCC Basic Specification No. 23500.
Addition: Para 1.5 Power Dissipation
Amend max rating to be 62.5W (was 25W)
Addition: Para 1.8
Amend item b) to read Terminals (was leads).
Addition (& clarification): Para 2.1.1.2
Add Para 2.1.1.2 as follows:
Deviations from Qualification and Periodic Testing - Chart F3
- Constant Acceleration is not applicable (for SMD.5).
- Terminal Strength is not applicable (for SMD.5).
Amendment: Para 2.4 Terminal Strength
Delete Para. 2.4 (& renumber subsequent Paras. accordingly)
Amendment: Para 2.11.2
Amendment per note “a)” under the table is deleted from this DCR.
Documents affected:
(5205/023) TRANSISTORS, POWER, MOSFET, N- ...
Other DCRs affecting these documents:
No other DCRs
Changes
(5205/023) TRANSISTORS, POWER, MOSFET, N-CHANNEL, RAD-HARD BA ...
Page:
Paragraph:
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Documents
ESCC Documents & Procedures
Archive
ESA/SCC Level 0 and 1 Document
Products
Standards
Specifications
Qualification
Qualified Parts List
Qualified Manufacturers List
Selection
Activities
Archive
European Components Initiative (ECI)
Other ESA Programmes
Links
ESCIES
Problem Notices