Component Details HB20PX-10

Component

EPPL Part: 2
Part Type: HB20PX-10
Group: MICROCIRCUITS Subgroup: MICROWAVE MONOLITIC INTEGRATED CIRCUITS (MMIC)
Package:
Description:
HBT InGaP (2 µm emitter width)
Applications in Power Amplifiers up to Ku Band
Absolute Maximum Ratings (AMR) for HB20PX-10:
- Base to Collector Voltage : Vbc = 11.0V
- Collector to Emitter Voltage: Vce = 9.5V (VSWRmax = 2 and 4dBC of Compression, Jce = 33000A/cm² for single cell transistor in CW mode and Jce = 22000A/cm² for bi-cell transistor in pulsed mode)
- RF Compression = 5 dB (under maximum operating conditions)
- Max DC Collector Emitter Current Density: Jce = 40000A/cm² per emitter area (in pulsed mode for Bi-Cell Transistor)
- Base to Emitter Voltage: Vbe = 2.5V

ESCC Specifications:
Other Specifications:
Manufacturer:
UMS
Bât Charmille - Parc Silic de Villebon - Courtaboeuf, 10 avenue du Québec
91140 Villebon-sur-Yvette
France

Ref. number:
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Approval Status
Qualification:
Others
Other:
Highest screening level (MIL):
Evaluation programmes or other approvals:
Former space usage:
Previous Procurement and Test Data
Test data (Evaluation, Lot acceptance, DPA, MIL QCI/TCI, ...):
Radiation Hardness Data
Total Dose Effects:
Displacement damage:
Single event effects (SEL/SEU/SET/SEFI/SEB/SEGR/others):
Remarks
It is the responsibility of the users to check that the process design can withstand the radiation requirements for its application. Max ratings should be in conformance with the application

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