LoginComponent Details HB20PX-10
Component |
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| EPPL Part: | 2 | |||
| Part Type: | HB20PX-10 | |||
| Group: | MICROCIRCUITS | Subgroup: | MICROWAVE MONOLITIC INTEGRATED CIRCUITS (MMIC) | |
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| Description: | ||||
HBT InGaP (2 µm emitter width) Applications in Power Amplifiers up to Ku Band Absolute Maximum Ratings (AMR) for HB20PX-10: - Base to Collector Voltage : Vbc = 11.0V - Collector to Emitter Voltage: Vce = 9.5V (VSWRmax = 2 and 4dBC of Compression, Jce = 33000A/cm² for single cell transistor in CW mode and Jce = 22000A/cm² for bi-cell transistor in pulsed mode) - RF Compression = 5 dB (under maximum operating conditions) - Max DC Collector Emitter Current Density: Jce = 40000A/cm² per emitter area (in pulsed mode for Bi-Cell Transistor) - Base to Emitter Voltage: Vbe = 2.5V |
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| Manufacturer: | ||||
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UMS Bât Charmille - Parc Silic de Villebon - Courtaboeuf, 10 avenue du Québec 91140 Villebon-sur-Yvette France |
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| Ref. number: | ||||
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Approval Status
Qualification: |
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| Others | |||
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| Highest screening level (MIL): | |||
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Previous Procurement and Test Data
Test data (Evaluation, Lot acceptance, DPA, MIL QCI/TCI, ...): |
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Radiation Hardness Data
Total Dose Effects: |
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| Single event effects (SEL/SEU/SET/SEFI/SEB/SEGR/others): | |||
Remarks |
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| It is the responsibility of the users to check that the process design can withstand the radiation requirements for its application. Max ratings should be in conformance with the application | |||
