LoginComponent Details MMICProcessPPH15X-10
Component |
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| EPPL Part: | 2 | |||
| Part Type: | MMICProcessPPH15X-10 | |||
| Group: | MICROCIRCUITS | Subgroup: | MICROWAVE MONOLITIC INTEGRATED CIRCUITS (MMIC) | |
| Package: | ||||
| Description: | ||||
0.15 µm GaAs Power P-HEMT process Absolute Maximum Ratings (AMR) for PPH15X-10: - Drain to Source Voltage: Vds = 8V at Ids = 150mA/mm - Maximum instantaneous RF Drain to Gate Voltage: Vdgmax = 14V at the maximum DC Operating point specified above (Vds = 8V and Ids = 150mA/mm) - RF Compression = 7dB for Power matched 8x75m cell at Ids = 150mA/mm and Vds = 7V - Gate to Source Voltage: Vgs = -2.5V |
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ESCC Specifications: |
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| Other Specifications: | ||||
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| Manufacturer: | ||||
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UMS Bât Charmille - Parc Silic de Villebon - Courtaboeuf, 10 avenue du Québec 91140 Villebon-sur-Yvette France |
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| Ref. number: | ||||
| 1171739935113255983 | ||||
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Approval Status
Qualification: |
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| Others | |||
| Other: | |||
| Highest screening level (MIL): | |||
| See EAF Form attached | |||
| Evaluation programmes or other approvals: | |||
| ESCCeval fundedby DLR in accordance with 2269010 competed | |||
| Former space usage: | |||
| N/A | |||
Previous Procurement and Test Data
Test data (Evaluation, Lot acceptance, DPA, MIL QCI/TCI, ...): |
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| See EAF Form attached | |||
Radiation Hardness Data
Total Dose Effects: |
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| See EAF Form attached | |||
| Displacement damage: | |||
| Single event effects (SEL/SEU/SET/SEFI/SEB/SEGR/others): | |||
| See EAF Form attached | |||
Remarks |
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| SEE testing under DC+RF performed. Report available from supplier. | |||
