LoginComponent Details HB20S
Component |
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| EPPL Part: | 2 | |||
| Part Type: | HB20S | |||
| Group: | MICROCIRCUITS | Subgroup: | MICROWAVE MONOLITIC INTEGRATED CIRCUITS (MMIC) | |
| Package: | ||||
| Description: | ||||
Power HBT process Application in Power Transistors for L to C band Amplifiers |
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ESCC Specifications: |
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| Other Specifications: | ||||
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| Manufacturer: | ||||
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UMS Bât Charmille - Parc Silic de Villebon - Courtaboeuf, 10 avenue du Québec 91140 Villebon-sur-Yvette France |
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| Ref. number: | ||||
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Approval Status
Qualification: |
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| Others | |||
| Other: | |||
| Highest screening level (MIL): | |||
| Evaluation programmes or other approvals: | |||
| Former space usage: | |||
Previous Procurement and Test Data
Test data (Evaluation, Lot acceptance, DPA, MIL QCI/TCI, ...): |
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Radiation Hardness Data
Total Dose Effects: |
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| Displacement damage: | |||
| Single event effects (SEL/SEU/SET/SEFI/SEB/SEGR/others): | |||
Remarks |
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| No radiation tests was performed on this process. Therefore it is the responsibility of the users to check that its design can withstand the radiation requirements for its application. | |||
