LoginComponent Details PH15
Component |
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| EPPL Part: | 2 | |||
| Part Type: | PH15 | |||
| Group: | MICROCIRCUITS | Subgroup: | MICROWAVE MONOLITIC INTEGRATED CIRCUITS (MMIC) | |
| Package: | ||||
| Description: | ||||
MMIC GaAs Foumdry Process, 0.15 um Pseudomorphic High Electron Mobility Transistor (P-HEMT) for low noise, low level applications up to W Band |
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ESCC Specifications: |
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| Other Specifications: | ||||
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| Manufacturer: | ||||
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UMS Bât Charmille - Parc Silic de Villebon - Courtaboeuf, 10 avenue du Québec 91140 Villebon-sur-Yvette France |
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| Ref. number: | ||||
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Approval Status
Qualification: |
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| Others | |||
| Other: | |||
| Highest screening level (MIL): | |||
| Evaluation programmes or other approvals: | |||
| Former space usage: | |||
Previous Procurement and Test Data
Test data (Evaluation, Lot acceptance, DPA, MIL QCI/TCI, ...): |
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Radiation Hardness Data
Total Dose Effects: |
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| Displacement damage: | |||
| Single event effects (SEL/SEU/SET/SEFI/SEB/SEGR/others): | |||
Remarks |
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| Passive elements are similar to PH25 Process. No radiation tests were performed on this process. Therefore it is the responsibility of the users to check that its design can withstand the radiation requirements for its application (especially for SEE). | |||
