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Document change request DCR868
Show only changes
DCR:
868
Number:
868
Name:
Steve Thacker
E-mail:
s.thacker@morphe.eu
Organisation:
ESCC Executive Secretariat
Changes required for:
General
Status:
Implemented
Date status:
2014-11-17
Signature:
Anastasia Pesce
Document attachments:
No attachments available
Modifications:
No modifications
Documents affected:
(9203/022) CMOS Dual J-K Master Slave Fli ...
(5103/029) Diodes, Silicon, Power Reciti ...
(5106/017) Diode, Silicon, Power Rectifie ...
(3402) Generic Specification for Conn ...
(4008/001) Fuses, 0.14 to 3.5 Amps, Based ...
(9201/044) CMOS Dual 4-Input NAND Gate, b ...
(5103/031) Diodes, Power Rectifier, High ...
(9201/042) CMOS Dual 4-Input NOR Gates, b ...
(5106/019) Diodes Power Rectifier Schott ...
(5103/030) Diodes, Silicon, Power Rectifi ...
(9201/048) CMOS Quad Exclusive OR Gate, b ...
(9201/052) CMOS Quad 2-Input AND Gate, ba ...
(9201/045) CMOS Triple 3-Input NAND Gates ...
(5101/013) Diodes Switching, based on typ ...
(5207/005) Transistors Matched Dual PNP, ...
(5204/006) Transistors High Power PNP, ba ...
(5106/016) Diodes, Power Rectifier, Schot ...
(9201/047) CMOS Quad 2-Input Exclusive OR ...
(9201/055) CMOS Quad Exclusive NOR Gate, ...
(9201/041) CMOS Quad 2-Input NOR Gates, b ...
(9201/046) CMOS Triple 3-Input NOR Gate, ...
(5106/020) Diodes, Silicon, Power Schottk ...
(5106/018) Diode, Silicon, Power Rectifie ...
(9201/061) CMOS 8-Input NAND/AND Gate, ba ...
(3403) Generic Specification for Atte ...
(9201/043) CMOS Quad 2-Input NAND Gate, b ...
Other DCRs affecting these documents:
DCR854
,
DCR856
,
DCR865
,
DCR873
Changes
(9203/022) CMOS Dual J-K Master Slave Flip-Flop, based on typ ...
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Paragraph:
Original text
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(5103/029) Diodes, Silicon, Power Recitifier , High Efficien ...
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Modified text
Justification
(5106/017) Diode, Silicon, Power Rectifier, Schottky Barrier ...
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Modified text
Justification
(3402) Generic Specification for Connectors RF Coaxial
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Justification
(4008/001) Fuses, 0.14 to 3.5 Amps, Based on Type MGA-S
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Paragraph:
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(9201/044) CMOS Dual 4-Input NAND Gate, based on type 4012B
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Paragraph:
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Justification
(5103/031) Diodes, Power Rectifier, High Efficiency Fast Reco ...
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(9201/042) CMOS Dual 4-Input NOR Gates, based on type 4002B
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Justification
(5106/019) Diodes Power Rectifier Schottky Barrier based on ...
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Paragraph:
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Justification
(5103/030) Diodes, Silicon, Power Rectifier, High Efficiency, ...
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Paragraph:
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Justification
(9201/048) CMOS Quad Exclusive OR Gate, based on type 4070B
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Justification
(9201/052) CMOS Quad 2-Input AND Gate, based on type 4081B
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(9201/045) CMOS Triple 3-Input NAND Gates, based on type 4023 ...
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(5101/013) Diodes Switching, based on types 1N5807 through 1N ...
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(5207/005) Transistors Matched Dual PNP, based on types 2N381 ...
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(5204/006) Transistors High Power PNP, based on type BUX78
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(5106/016) Diodes, Power Rectifier, Schottky Barrier, based o ...
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Paragraph:
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(9201/047) CMOS Quad 2-Input Exclusive OR Gates, based on typ ...
Page:
Paragraph:
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Justification
(9201/055) CMOS Quad Exclusive NOR Gate, based on type 4077B
Page:
Paragraph:
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Justification
(9201/041) CMOS Quad 2-Input NOR Gates, based on type 4001B
Page:
Paragraph:
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Justification
(9201/046) CMOS Triple 3-Input NOR Gate, based on type 4025B
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Paragraph:
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(5106/020) Diodes, Silicon, Power Schottky Rectifier based on ...
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Paragraph:
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Justification
(5106/018) Diode, Silicon, Power Rectifier, Schottky Barrier, ...
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Paragraph:
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(9201/061) CMOS 8-Input NAND/AND Gate, based on type 4068B
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Paragraph:
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(3403) Generic Specification for Attenuators and Loads RF ...
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Paragraph:
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Justification
(9201/043) CMOS Quad 2-Input NAND Gate, based on type 4011B
Page:
Paragraph:
Original text
Modified text
Justification
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Documents
ESCC Documents & Procedures
Archive
ESA/SCC Level 0 and 1 Document
Products
Standards
Specifications
Qualification
Qualified Parts List
Qualified Manufacturers List
Selection
Activities
Archive
European Components Initiative (ECI)
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